Gets the user interface state of the element 獲取元素的用戶界面ui狀態(tài)。
Specifies the user interface state of a element within a 控件內(nèi)某元素的用戶界面( ui )狀態(tài)。
Influences of collision angle on the interface state of explosive compound materials 碰撞角對爆炸復(fù)合材料界面狀態(tài)的影響
Gets or sets a value indicating whether the band is in a selected user interface state 獲取或設(shè)置一個值,該值指示帶區(qū)是否為被選定。 (從
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery 假設(shè)隧道電子從硅進入氧化層和界面態(tài)的建立是輻射效應(yīng)的恢復(fù)機理。
In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states 然后使用光照條件討論了p和n型sicmos的界面態(tài)的性質(zhì),即p型為施主態(tài), n型為受主態(tài)。
It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate 模擬結(jié)果表明:退火過程所加柵偏壓的大小以及隧道電子效應(yīng)與建立的界面態(tài)所占比例的不同影響器件的恢復(fù)率。
The electrical parameters of buried oxide and interface state in soi structures influence the performance , reliability and the radiation hardness of devices fabricated in the superficial silicon film 完成了存儲陣列,控制電路,外圍電路的時序設(shè)計,原理圖設(shè)計,版圖設(shè)計,并且通過了drc , lvs檢查。
A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically 在輻照的電離效應(yīng)方面,研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
In the high frequency c - v experiments , the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states . the deep interface states were simply studied by using photo excitation 在無光照條件下,比較了n型和p型sicmos的不同特點,對其深耗盡特征和p型sicmos的平帶電壓作了討論和解釋。